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1

A Novel Read Scheme for Read Disturbance Suppression in 3D NAND Flash Memory

Zhang, Yu, Jin, Lei, Jiang, Dandan, Zou, Xingqi, Liu, Hongtao, Huo, Zongliang

Journal:

IEEE Electron Device Letters

Année:

2017

Langue:

english

Fichier:

PDF, 676 KB

english, 2017

2

Influence of rapid thermal annealing on the wafer warpage in 3D NAND Flash Memory

Li, Qi, Huo, Zongliang, Zhang, Yu, Zou, Xingqi, Gao, Jing, Yang, Chuan, Ding, Lei, Wu, Zhipeng, Li, Na, Zhang, Sen

Journal:

Semiconductor Science and Technology

Année:

2019

Langue:

english

Fichier:

PDF, 863 KB

english, 2019

3

A fast read retry method for 3D NAND flash memories using novel valley search algorithm

Li, Qianhui, Wang, Qi, Xu, Qikang, Huo, Zongliang

Journal:

IEICE Electronics Express

Année:

2018

Langue:

english

Fichier:

PDF, 1.75 MB

english, 2018

4

Failure analysis and process improvement of copper diffusion

Yuan, Luyue, Xia, Zhiliang, Hu, Xiaolong, Liu, Jun, Huo, Zongliang

Journal:

Microelectronics Reliability

Année:

2019

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2019

5

Optimization of silicon nanocrystals growth process by low pressure chemical vapor deposition for non-volatile memory application

Yong Wang, Xiaonan Yang, Qin Wang, Shibing Long, Manhong Zhang, Zongliang Huo, Bo Zhang, Ming Liu

Journal:

Thin Solid Films

Année:

2011

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2011

6

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Robust multi-bit programmable flash memory using a resonant tunnel barrier

Shieun Kim,, Seung Jae Baik,, Zongliang Huo,, Young-Jin Noh,, Chulsung Kim,, Jeong Hee Han,, In-Seok Yeo,, U-In Chung,, Joo Tae Moon,, Byung-Il Ryu,

Année:

2005

Langue:

english

Fichier:

PDF, 787 KB

english, 2005

7

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A page buffer design based on stable and area-saving embedded SRAM for flash applications

Cao, Huamin, Huo, Zongliang, Wang, Yu, Li, Ting, Liu, Jing, Jin, Lei, Zhang, Dengjun, Li, Di, Liu, Ming

Année:

2014

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2014

8

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Zhang, Junyu, Wang, Yong, Liu, Jing, Zhang, Manhong, Xu, Zhongguang, Huo, Zongliang, Liu, Ming

Journal:

Journal of Semiconductors

Année:

2012

Langue:

english

Fichier:

PDF, 285 KB

english, 2012

9

A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time

Liu, LiFang, Wu, Dong, Liu, XueMei, Huo, ZongLiang, Liu, Ming, Pan, LiYang

Journal:

SCIENCE CHINA Information Sciences

Année:

2015

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2015

10

Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory

Chen, Guoxing, Huo, Zongliang, Han, Yulong, Li, Xinkai, Zhang, Dong, Liu, Su, Liu, Ming

Journal:

Integrated Ferroelectrics

Année:

2014

Langue:

english

Fichier:

PDF, 272 KB

english, 2014

11

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Li, Xinkai, Huo, Zongliang, Jin, Lei, Wang, Yan, Liu, Jing, Jiang, Dandan, Yang, Xiaonan, Liu, Ming

Année:

2014

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2014

12

[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - String select transistor leakage suppression by threshold voltage modulation in 3D NAND Flash Memory

Yu Zhang,, Lei Jin,, Zhiliang Xia,, Dandan Jiang,, Xingqi Zou,, Qiang Xu,, Peizhen Hong,, Zhaoyun Tang,, Ming Zeng,, Jing Gao,, Shaoning Mei,, Zongliang Huo,

Année:

2016

Langue:

english

Fichier:

PDF, 538 KB

english, 2016

13

The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory

Zou, Xingqi, Jin, Lei, Jiang, Dandan, Zhang, Yu, Chen, Guoxing, Xia, Zhiliang, Huo, Zongliang

Journal:

Journal of Nanoscience and Nanotechnology

Année:

2018

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2018

14

PSM control technique for primary-side regulating fly-back converters

Du, Hanxiao, Huo, Zongliang

Journal:

IET Power Electronics

Année:

2018

Langue:

english

Fichier:

PDF, 5.63 MB

english, 2018

15

A 1.2 mV ripple, 4.5 V charge pump using controllable pumping current technology

Huang, Cece, Wang, Yu, Chen, Teng, Fu, Liyin, Wang, Qi, Huo, Zongliang

Journal:

IEICE Electronics Express

Année:

2017

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2017

16

Investigation of erase cycling induced TSG Vt shift in 3D NAND Flash Memory

Yan, Liang, Jin, Lei, Zou, Xingqi, Ai, Di, Li, Da, Zhang, An, Wei, Huazheng, Chen, Yi, Huo, Zongliang

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 547 KB

english, 2018

17

Investigation of Threshold Voltage Distribution Temperature Dependence in 3D NAND Flash

Zhao, Chenglin, Jin, Lei, Li, Da, Xu, Feng, Zou, Xingqi, Zhang, Yu, Song, Yali, Wei, Huazheng, Chen, Yi, Li, Chunlong, Huo, Zongliang

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 597 KB

english, 2018

18

A fast read retry method for 3D NAND flash memories using novel valley search algorithm

Li, Qianhui, Wang, Qi, Xu, Qikang, Huo, Zongliang

Journal:

IEICE Electronics Express

Année:

2018

Fichier:

PDF, 1.75 MB

2018

19

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Program Voltage Generator with Ultra-Low Ripple for 3D NAND Flash in Standard CMOS Process

Huang, Cece, Liu, Fei, Wang, Qianqian, Li, Chunlong, Huo, Zongliang

Année:

2019

Langue:

english

Fichier:

PDF, 142 KB

english, 2019

20

A High Density and Low Cost Staircase Scheme for 3D NAND Flash Memory: SDS(Stair Divided Scheme)

Hong, Peizhen, Xia, Zhiliang, Yin, Huaxiang, Li, Chunlong, Huo, Zongliang

Journal:

ECS Journal of Solid State Science and Technology

Année:

2019

Langue:

english

Fichier:

PDF, 812 KB

english, 2019

21

Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

Yang, Tao, Xia, Zhiliang, Shi, Dandan, Ouyang, Yingjie, Huo, Zongliang

Journal:

IEEE Journal of the Electron Devices Society

Année:

2020

Langue:

english

Fichier:

PDF, 2.47 MB

english, 2020

22

Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory

Shen, Xinshuai, Xia, Zhiliang, Yang, Tao, Liu, Lei, Dong, Jinwen, Zhou, Wenxi, Li, Chunlong, Huo, Zongliang

Journal:

IEEE Journal of the Electron Devices Society

Année:

2020

Fichier:

PDF, 2.73 MB

2020

23

[IEEE 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Sevilla (2020.10.12-2020.10.14)] 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Adaptive Pulse Program Scheme to Improve the Vth Distribution for 3D NAND Flash

Li, Shuang, Du, Zhichao, Wang, Yu, Liu, Fei, Wang, Qi, Huo, Zongliang

Année:

2020

Fichier:

PDF, 1.15 MB

2020

24

Enhanced DNA Sequencing Performance Through Edge-Hydrogenation of Graphene Electrodes

Yuhui He, Ralph H. Scheicher, Anton Grigoriev, Rajeev Ahuja, Shibing Long, ZongLiang Huo, Ming Liu

Journal:

Advanced Functional Materials

Année:

2011

Langue:

english

Fichier:

PDF, 765 KB

english, 2011

25

Nanoelectrodes: Enhanced DNA Sequencing Performance Through Edge-Hydrogenation of Graphene Electrodes (Adv. Funct. Mater. 14/2011)

Yuhui He, Ralph H. Scheicher, Anton Grigoriev, Rajeev Ahuja, Shibing Long, ZongLiang Huo, Ming Liu

Journal:

Advanced Functional Materials

Année:

2011

Fichier:

PDF, 3.41 MB

2011

26

Low frequency current noise in 2.5 nm MOSFET and fractal dimension of soft breakdown

Zongliang Huo, Lingfeng Mao, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 207 KB

english, 2003

27

Approaches for improving the performance of filament-type resistive switching memory

WenTai Lian, ShiBing Long, HangBing Lü, Qi Liu, YingTao Li, Sen Zhang, Yan Wang, ZongLiang Huo, YueHua Dai, JunNing Chen, Ming Liu

Journal:

Chinese Science Bulletin

Année:

2011

Langue:

english

Fichier:

PDF, 551 KB

english, 2011

28

Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory

Zhu, Chenxin, Xu, Zhongguang, Huo, Zongliang, Zheng, Zhiwei, Cui, Yanxiang, Wang, Yumei, Liu, Jing, Li, Fanghua, Liu, Ming

Journal:

Journal of Physics D Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2012

29

Effect of high temperature annealing on the performance of MANOS charge trapping memory

Lin Jin, ManHong Zhang, ZongLiang Huo, ZhaoAn Yu, DanDan Jiang, Yong Wang, Jie Bai, JunNing Chen, Ming Liu

Journal:

Science China Technological Sciences

Année:

2012

Langue:

english

Fichier:

PDF, 588 KB

english, 2012

30

Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement

XiaoNan Yang, ManHong Zhang, Yong Wang, ZongLiang Huo, ShiBing Long, Bo Zhang, Jing Liu, Ming Liu

Journal:

Science China Technological Sciences

Année:

2012

Langue:

english

Fichier:

PDF, 651 KB

english, 2012

31

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Liu, Qi, Long, Shibing, Lv, Hangbing, Wang, Wei, Niu, Jiebin, Huo, Zongliang, Chen, Junning, Liu, Ming

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 2.24 MB

english, 2010

32

Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy

Yulong Han,, Zongliang Huo,, Xinkai Li,, Guoxing Chen,, Xiaonan Yang,, Dong Zhang,, Yong Wang,, Tianchun Ye,, Ming Liu,

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 526 KB

english, 2013

33

Bipolar one diode–one resistor integration for high-density resistive memory applications

Li, Yingtao, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Ming, Xie, Hongwei, Zhang, Kangwei, Huo, Zongliang, Liu, Ming

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 546 KB

english, 2013

34

Unification of three multiphonon trap-assisted tunneling mechanisms

Zhang, Manhong, Huo, Zongliang, Yu, Zhaoan, Liu, Jing, Liu, Ming

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 1.60 MB

english, 2011

35

Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-Îº trapping layer

Zhu, Chenxin, Huo, Zongliang, Xu, Zhongguang, Zhang, Manhong, Wang, Qin, Liu, Jing, Long, Shibing, Liu, Ming

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 544 KB

english, 2010

36

Wang, Yan, Lv, Hangbing, Wang, Wei, Liu, Qi, Long, Shibing, Wang, Qin, Huo, Zongliang, Zhang, Sen, Li, Yingtao, Zuo, Qingyun

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 294 KB

english, 2010

37

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming

Journal:

Advanced Functional Materials

Année:

2014

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2014

38

[IEEE 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Shanghai, China (2011.11.7-2011.11.9)] 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding - Investigation of charge trap and loss characteristics for charge trap memory by electrostatic force microscopy

Zhu, Chenxin, Yang, Rong, Huo, Zongliang, Xu, Zhongguang, Shi, Dongxia, Liu, Jing, Zhang, Guangyu, Liu, Ming

Année:

2011

Langue:

english

Fichier:

PDF, 2.01 MB

english, 2011

39

$ hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer]]>

Liu, Qi, Long, Shibing, Wang, Wei, Tanachutiwat, Sansiri, Li, Yingtao, Wang, Qin, Zhang, Manhong, Huo, Zongliang, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 391 KB

english, 2010

40

[IEEE 4th IEEE Conference on Nanotechnology, 2004. - Munich, Germany (16-19 Aug. 2004)] 4th IEEE Conference on Nanotechnology, 2004. - STTM - promising nanoelectronic DRAM device

Scung Jae Baik,, Zongliang Huo,, Seung-Hyun Lim,, In-Seok Yeo,, Siyoung Choi,, Chung, U.-I., Joo Tae Moon,

Année:

2004

Langue:

english

Fichier:

PDF, 170 KB

english, 2004

41

[IEEE 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Shanghai, China (2011.11.7-2011.11.9)] 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding - Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions

Xu, Zhongguang, Huo, Zongliang, Zhu, Chenxin, Liu, Jing, Liu, Ming

Année:

2011

Langue:

english

Fichier:

PDF, 384 KB

english, 2011

42

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Shibing Long,, Xiaojuan Lian,, Cagli, C., Perniola, L., Miranda, E., Jimenez, D., Hangbing Lv,, Qi Liu,, Ling Li,, Zongliang Huo,, Ming Liu,, Sune, J.

Année:

2013

Langue:

english

Fichier:

PDF, 446 KB

english, 2013

43

Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory

Sun, Zhong, Zhang, Manhong, Huo, Zongliang, Li, Shaobin, Yang, Yun, Qiu, Shengfen, Wu, Hanming, Liu, Ming

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 911 KB

english, 2013

44

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Novel Operation Scheme

Huo, Zongliang, Baik, Seungjae, Kim, Shieun, Yeo, In-seok, Chung, U-in, Moon, Joo

Année:

2006

Langue:

english

Fichier:

PDF, 2.61 MB

english, 2006

45

Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

Jiang, Dandan, Zhang, Manhong, Huo, Zongliang, Sun, Zhong, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 344 KB

english, 2012

46

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory

Huo, ZongLiang, Yang, JunKyu, Lim, SeungHyun, Baik, SeungJae, Lee, Juyul, Han, JeongHee, Yeo, In-Seok, Chung, U-In, Moon, Joo Tae, Ryu, Byung-II

Année:

2007

Langue:

english

Fichier:

PDF, 615 KB

english, 2007

47

Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$:Cu/Pt RRAM Device

Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Wei, Wang, Qin, Huo, Zongliang, Wang, Yan, Zhang, Sen, Liu, Su, Liu, Ming

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 302 KB

english, 2011

48

[IEEE 2012 4th IEEE International Memory Workshop (IMW) - Milan (2012.05.20-2012.05.23)] 2012 4th IEEE International Memory Workshop - High Performance MAHAHOS Memory Devices: Charge Trapping and Distribution in Bandgap Engineered Structure

Chenxin Zhu,, Zhongguang Xu,, Rong Yang,, Zongliang Huo,, Yanxiang Cui,, Dongxia Shi,, Yumei Wang,, Jing Liu,, Guangyu Zhang,, Fanghua Li,, Ming Liu,

Année:

2012

Langue:

english

Fichier:

PDF, 3.06 MB

english, 2012

49

Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current

Bi, Chong, Huang, Lin, Long, Shibing, Liu, Qi, Yao, Zhihong, Li, Ling, Huo, Zongliang, Pan, Liqing, Liu, Ming

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 897 KB

english, 2014

50

Comparison of tunneling current assisted by neutral and positive traps with finite ranged core-potential

Sun, Zhong, Zhang, Manhong, Huo, Zongliang, Wang, Yong, Liu, Ming

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 1.43 MB

english, 2012